Influence of grain boundary on electric field distribution in CdZnTe crystal

Weilong Chen; Rongrong Guo; Yushen Tong; Lili Liu; Shenglan Zhou; Jinhai Lin

doi:10.1117/12.2663350

4 April 2023 Influence of grain boundary on electric field distribution in CdZnTe crystal

Weilong Chen, Rongrong Guo, Yushen Tong, Lili Liu, Shenglan Zhou, Jinhai Lin

Proceedings Volume 12617, Ninth Symposium on Novel Photoelectronic Detection Technology and Applications; 126170T (2023) https://doi.org/10.1117/12.2663350
Event: 9th Symposium on Novel Photoelectronic Detection Technology and Applications (NDTA 2022), 2022, Hefei, China

Abstract

Grain boundary limits the performance and application of CdZnTe nuclear radiation detectors. In order to explore the influence of grain boundary in CdZnTe crystals on device performance, the space charge distribution and internal electric field distribution of CdZnTe crystals containing grain boundary were simulated by Silvaco TCAD technique. The simulation results demonstrated that the energy bands at the CdZnTe grain boundary were bent upward in the thermal equilibrium state, forming a back-to-back Schottky barrier. When the applied bias voltage was increased, the overall energy band structure of the Au/CdZnTe/Au tended to tilt from the cathode to the anode and the internal electric field increased with the increase of the applied bias voltage. The dead zone in the crystal gradually decreased and the internal electric field was linearly distributed, which helped to improve the carrier collection efficiency in the device. In addition, the grain boundary defect concentration can regulate the internal electric field distribution of CdZnTe, thus affecting the carrier transport properties.

Citation Download Citation

Weilong Chen, Rongrong Guo, Yushen Tong, Lili Liu, Shenglan Zhou, and Jinhai Lin "Influence of grain boundary on electric field distribution in CdZnTe crystal", Proc. SPIE 12617, Ninth Symposium on Novel Photoelectronic Detection Technology and Applications, 126170T (4 April 2023); https://doi.org/10.1117/12.2663350

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