Focus sensing using placement and CD variation for high NA EUV lithography

Victor Calado; Simon Mathijssen; Eelco van Setten; Jo Finders; Friso Wittebrood; Wim Bouman; Kaustuve Bhattacharyya; Willem op 't Root; Elliott McNamara; Matthew McLaren

doi:10.1117/12.3010835

10 April 2024 Focus sensing using placement and CD variation for high NA EUV lithography

Victor Calado, Simon Mathijssen, Eelco van Setten, Jo Finders, Friso Wittebrood, Wim Bouman, Kaustuve Bhattacharyya, Willem op 't Root, Elliott McNamara, Matthew McLaren

Author Affiliations +

Proceedings Volume 12953, Optical and EUV Nanolithography XXXVII; 1295307 (2024) https://doi.org/10.1117/12.3010835
Event: SPIE Advanced Lithography + Patterning, 2024, San Jose, California, United States

Abstract

The small depth of focus of high-NA EUV systems asks for robust focus metrology and possibly even focus control. Fast optical focus metrology is possible with dedicated focus-sensitive targets that make use of mask-3D effects. It is beneficial to connect this optical focus measurement to the focus behavior of actual device structures. Focus errors of device structures can be determined by measuring Pattern Placement Errors (PPE) with e-beam since a focus error usually lead to a layout-dependent PPE. By using a large field of view SEM we can capture a large variety of pattern layouts in 1 image acquisition. This large pattern variety creates a lot of diversity resulting in a robust “on-device” focus measurement.

Conference Presentation

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Victor Calado, Simon Mathijssen, Eelco van Setten, Jo Finders, Friso Wittebrood, Wim Bouman, Kaustuve Bhattacharyya, Willem op 't Root, Elliott McNamara, and Matthew McLaren "Focus sensing using placement and CD variation for high NA EUV lithography", Proc. SPIE 12953, Optical and EUV Nanolithography XXXVII, 1295307 (10 April 2024); https://doi.org/10.1117/12.3010835

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