A new stochastic EUV resist model based on a modified minimal process algorithm

Jing Xue; Guangjian He; Taian Fan; Yun Wang; Tianchun Ye; Yayi Wei

doi:10.1117/12.3010234

10 April 2024 A new stochastic EUV resist model based on a modified minimal process algorithm

Jing Xue, Guangjian He, Taian Fan, Yun Wang, Tianchun Ye, Yayi Wei

Proceedings Volume 12953, Optical and EUV Nanolithography XXXVII; 1295314 (2024) https://doi.org/10.1117/12.3010234
Event: SPIE Advanced Lithography + Patterning, 2024, San Jose, California, United States

Conference Poster

Abstract

In the implementation of EUV lithography, the stochastic effects in photoresist patterning are significant. The stochastic characteristic of Chemically Amplified Resist (CAR) for EUV demands novel modeling methods instead of the continuous model used in DUV. The previous model is directly derived from Gillespie algorithm, which sorts all cells into logarithmic classes based on the magnitude of the propensity functions. It takes a lot of time to update the classes in each iteration. Moreover, it splits the whole system only once, and for large systems a logarithmic class can include still larger number of cells, which can also take up a large amount of computing time. In this study, a new stochastic EUV resist model is proposed to improve the speed of PEB simulation by using a modified minimal process algorithm, which employs a splitting method called cascade classification. It divides evenly all cells into small groups in some arbitrary manner and each group is further divided evenly into smaller ones, and so on, until the smallest groups include a sufficiently small number of cells. The research shows that the new algorithm is more efficient than the previous one while maintaining accuracy.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Jing Xue, Guangjian He, Taian Fan, Yun Wang, Tianchun Ye, and Yayi Wei "A new stochastic EUV resist model based on a modified minimal process algorithm", Proc. SPIE 12953, Optical and EUV Nanolithography XXXVII, 1295314 (10 April 2024); https://doi.org/10.1117/12.3010234

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