The resolution enhancement lithography assisted by chemical shrink based on KrF lithography technology

Shi-Li Xiang; Jun Liu; Lin-Po Hao; Chuan-Yu Shao

doi:10.1117/12.3010606

9 April 2024 The resolution enhancement lithography assisted by chemical shrink based on KrF lithography technology

Shi-Li Xiang, Jun Liu, Lin-Po Hao, Chuan-Yu Shao

Proceedings Volume 12956, Novel Patterning Technologies 2024; 129560P (2024) https://doi.org/10.1117/12.3010606
Event: SPIE Advanced Lithography + Patterning, 2024, San Jose, California, United States

Conference Poster

Abstract

Stems from the challenge to manufacture advanced semiconductor devices with a Critical Dimension (CD) of 100 nm or even 90 nm, the resolution enhancement lithography assisted by chemical shrink (RELACS) is proposed to increase the resolution of the i-line or KrF lithography. RELACS technology gets rid of the dependence on expensive ArF lithography equipment at 150-90 nm process nodes, and continuously reduces the two-dimensional size of the pattern on the wafer through the interfacial chemical reaction between the shrink materials and the photoresists. Meanwhile, good control of the line edge roughness (LER) after the interface chemical reaction is important for semiconductor mass production, and Hitachi's CD-SEM (CS4800) instrument provides roughness (LER/LWR) measurement technology. RELACS technology offers a new possibility for the development of advanced processes in the semiconductor manufacturing.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Shi-Li Xiang, Jun Liu, Lin-Po Hao, and Chuan-Yu Shao "The resolution enhancement lithography assisted by chemical shrink based on KrF lithography technology", Proc. SPIE 12956, Novel Patterning Technologies 2024, 129560P (9 April 2024); https://doi.org/10.1117/12.3010606

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