Development of high contrast EUV photoresist for narrow pitch C/H patterning

Yonghoon Moon; Sungan Do; Hana Kim; Seungchul Kwon; Hoyoon Park; Cheol Kang; Jae-Jun Lee; Chanjae Ahn; Dmitry Androsov; Minsang Kim; Suk-Koo Hong

doi:10.1117/12.3009393

9 April 2024 Development of high contrast EUV photoresist for narrow pitch C/H patterning

Yonghoon Moon, Sungan Do, Hana Kim, Seungchul Kwon, Hoyoon Park, Cheol Kang, Jae-Jun Lee, Chanjae Ahn, Dmitry Androsov, Minsang Kim, Suk-Koo Hong

Author Affiliations +

Proceedings Volume 12957, Advances in Patterning Materials and Processes XLI; 129570O (2024) https://doi.org/10.1117/12.3009393
Event: SPIE Advanced Lithography + Patterning, 2024, San Jose, California, United States

Abstract

The organic non-chemically amplified resist (non-CAR) materials have been developed for fine pitch contact hole patterning process to remove the acid blur of conventional chemically amplified resist (CAR) system, but non-CAR materials usually show lower contrast and sensitivity compared to conventional CAR materials, so additional improvements are needed for practical application. In this study, we developed new platforms of EUV PTD resist materials to overcome these limitations and enable fine pitch C/H patterning. The main target of our study is to reduce acid blur and to maintain chemical contrast compared to conventional CAR system by 1) finding better EUV-active structures, or 2) simultaneously generating polarity switching and molecular weight (M.W.) change, or 3) maximizing the M.W. change through the depolymerization. Those new resist materials have confirmed showing equivalent or higher contrast compared to conventional CAR, and also having good resolution in EUV C/H patterning evaluation.

Conference Presentation

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Yonghoon Moon, Sungan Do, Hana Kim, Seungchul Kwon, Hoyoon Park, Cheol Kang, Jae-Jun Lee, Chanjae Ahn, Dmitry Androsov, Minsang Kim, and Suk-Koo Hong "Development of high contrast EUV photoresist for narrow pitch C/H patterning", Proc. SPIE 12957, Advances in Patterning Materials and Processes XLI, 129570O (9 April 2024); https://doi.org/10.1117/12.3009393

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