Main chain scission resists towards high-NA EUV lithography

Akihide Shirotori; Yuji Oda; Rui Zhang; Kazunori Taguchi; Nobuhiro Sato; Sin Fu Yeh; Hyo Seon Suh; Danilo De Simone; Geert Vandenberghe; Hideaki Sanuki

doi:10.1117/12.3009737

9 April 2024 Main chain scission resists towards high-NA EUV lithography

Akihide Shirotori, Yuji Oda, Rui Zhang, Kazunori Taguchi, Nobuhiro Sato, Sin Fu Yeh , Hyo Seon Suh, Danilo De Simone, Geert Vandenberghe, Hideaki Sanuki

Author Affiliations +

Proceedings Volume 12957, Advances in Patterning Materials and Processes XLI; 129570P (2024) https://doi.org/10.1117/12.3009737
Event: SPIE Advanced Lithography + Patterning, 2024, San Jose, California, United States

Abstract

In this work, we introduce the novel resist of ZR13D for high-NA’s generation and report their patterning performance in both ADI and AEI which was compared to the reference resist of ZER02#04DM. Zeon resists have some challenges that LCDU and dose to size are still high and resolution and defectivity should be improved as well. The concreate approaches in order to improve the challenges are that to make scission reaction efficient and to get developability more at exposed area higher in changing both monomers and functional groups. By both effects, Zeon aims to make clear threshold between exposed and un-exposed area and improve low contrast and sensitivity at tight patterns especially. Zeon has developed a new resist (ZR13D, R&D sample) in order to improve their challenges. ZR13D enabled to improve the contrast by EUV when compared to ZER02#04DM significantly. The litho-performance was able to be enhanced on both sensitivity and LCDU by breaking though RLS trade-off. And ZR13D could transfer patterns well in etching process, and then, holes with Zeon resists in AEI enabled to go through until the bottom of SiN substrate without residues. Additionally, ZR13D has maintained the stability of process delay from EUV expose to development process for stitching. It was clarified that ZR13D has the sufficient potential to be utilized at high-NA generation.

Conference Presentation

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Akihide Shirotori, Yuji Oda, Rui Zhang, Kazunori Taguchi, Nobuhiro Sato, Sin Fu Yeh , Hyo Seon Suh, Danilo De Simone, Geert Vandenberghe, and Hideaki Sanuki "Main chain scission resists towards high-NA EUV lithography", Proc. SPIE 12957, Advances in Patterning Materials and Processes XLI, 129570P (9 April 2024); https://doi.org/10.1117/12.3009737

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