Presentation + Paper
9 April 2024 Sub-20nm tip-to-tip enabled by anti-spacer patterning
J. Grzeskowiak, M. Murphy, D. Power, S. Grzeskowiak, E. Liu, D. Conklin, A. deVilliers
Author Affiliations +
Abstract
Alternative patterning solutions, such as litho-freeze-litho-etch (LFLE) and spacer-based pitch splitting, have been a cornerstone of advanced technology nodes to enable device scaling. The greatest utility comes from the ability to self-align a pitch splitting process; however, traditional spacer-based patterning techniques require the deposition and etch of multiple materials, which reduce throughput and increase manufacturing costs. Anti-spacer technology, on the other hand, enables both self-aligned pitch splitting and high throughput via a single pass track-based process. Here, we present the utility of combining a 193nm immersion anti-spacer process with LFLE to enable the formation of sub-20nm slot contact features for a minimum tip-to-tip cut, with a scaling path to achieve sub-12nm cuts.
Conference Presentation
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
J. Grzeskowiak, M. Murphy, D. Power, S. Grzeskowiak, E. Liu, D. Conklin, and A. deVilliers "Sub-20nm tip-to-tip enabled by anti-spacer patterning", Proc. SPIE 12957, Advances in Patterning Materials and Processes XLI, 129570U (9 April 2024); https://doi.org/10.1117/12.3009982
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KEYWORDS
Photoresist materials

Optical lithography

Etching

Design

Extreme ultraviolet

Extreme ultraviolet lithography

Lithography

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