Application of higher absorption materials to the underlayer of EUV lithography

Tadashi Omatsu; Sachiko Shinjo; Masatoshi Echigo; Yuki Ishimaru; Takahiro Kozawa

doi:10.1117/12.3012067

9 April 2024 Application of higher absorption materials to the underlayer of EUV lithography

Tadashi Omatsu, Sachiko Shinjo, Masatoshi Echigo, Yuki Ishimaru, Takahiro Kozawa

Proceedings Volume 12957, Advances in Patterning Materials and Processes XLI; 1295723 (2024) https://doi.org/10.1117/12.3012067
Event: SPIE Advanced Lithography + Patterning, 2024, San Jose, California, United States

Conference Poster

Abstract

In the application of extreme ultraviolet (EUV) lithography, stochastic defects are one of the fundamental issues, and the improvements of the sensitivity of resist materials are one of the requirements for the application of EUV lithography process to the future nodes. As reported before, as the absorption of EUV photons depends on the species of element in each material, we have studied introducing the iodine element to lithography materials for the sensitivity issues in EUV lithography process. On this report, the studies of the effect of applying the iodine-containing material to the underlayer of resist film are shown by monitoring the mechanism of the chemically amplified resist system and the evaluation the performance of patterning.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Tadashi Omatsu, Sachiko Shinjo, Masatoshi Echigo, Yuki Ishimaru, and Takahiro Kozawa "Application of higher absorption materials to the underlayer of EUV lithography", Proc. SPIE 12957, Advances in Patterning Materials and Processes XLI, 1295723 (9 April 2024); https://doi.org/10.1117/12.3012067

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