Study of the electronic property of large-area PdSe2 films prepared by plasma enhanced chemical vapor deposition at low temperature

Rui Zhang; Shaofeng Wen; Yiming Gong; Qiusong Zhang; Changyong Lan; Chun Li

doi:10.1117/12.3015362

6 February 2024 Study of the electronic property of large-area PdSe₂ films prepared by plasma enhanced chemical vapor deposition at low temperature

Rui Zhang, Shaofeng Wen, Yiming Gong, Qiusong Zhang, Changyong Lan, Chun Li

Author Affiliations +

Proceedings Volume 12979, Ninth International Conference on Energy Materials and Electrical Engineering (ICEMEE 2023); 129794M (2024) https://doi.org/10.1117/12.3015362
Event: 9th International Conference on Energy Materials and Electrical Engineering (ICEMEE 2023), 2023, Guilin, China

Abstract

Due to its outstanding qualities, including high carrier mobility, a broadband tunable bandgap, and ambient-environment stability, the two-dimensional material palladium diselenide (PdSe₂) has garnered considerable interest. The direct synthesis of PdSe₂ on a polyimide (PI) substrate using reported methods in literature is challenging, primarily due to the high synthesis temperature requirement of over 250 °C. In this study, we report the direct synthesis of a large-area PdSe₂ film on a PI substrate at 150 °C by Plasma-Enhanced Chemical Vapor Deposition (PECVD). The Hall measurement results show that the film prepared on PI substrate has a carrier mobility of 2.4 cm² V^-1 s^-1. Our study demonstrates the effectiveness of PECVD as a method to synthesize large-area PdSe₂ films at low temperatures, suggesting prospective applications in flexible electronic devices.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Rui Zhang, Shaofeng Wen, Yiming Gong, Qiusong Zhang, Changyong Lan, and Chun Li "Study of the electronic property of large-area PdSe₂ films prepared by plasma enhanced chemical vapor deposition at low temperature", Proc. SPIE 12979, Ninth International Conference on Energy Materials and Electrical Engineering (ICEMEE 2023), 129794M (6 February 2024); https://doi.org/10.1117/12.3015362

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