Paper
1 February 1991 Hot carrier relaxation in bulk InGaAs and quantum-wells
Andrew Gregory, Richard T. Phillips, Fariduddin A. Majumder
Author Affiliations +
Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24545
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany
Abstract
We have used the luminescence upconversion technique to perform time-resolved measurements on both bulk InGaAs lattice-matched to InP and InGaAsflnAlAs multiple quantum wells (MQW) at a resolution of . ''7OOfs. For the bulk we present carrier temperatures for O extracted in the usual way from the high energy tail of transient spectra and relate this to more complete lineshape and cooling curve analyses. For the MQW we have found luminescence associated with the n subbands to be persistent to times in excess of 500ps and attribute this to real space transfer effects. In addition we compare rise and decay time data over the spectral emission ranges for the bulk and MQW.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andrew Gregory, Richard T. Phillips, and Fariduddin A. Majumder "Hot carrier relaxation in bulk InGaAs and quantum-wells", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); https://doi.org/10.1117/12.24545
Lens.org Logo
CITATIONS
Cited by 1 scholarly publication.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Luminescence

Optoelectronic devices

Indium gallium arsenide

Physics

Monte Carlo methods

Quantum wells

Upconversion

Back to Top