Neutron transmutation doping of silicon in the VVR-S type nuclear reactor

Eugenia T. Halmagean

doi:10.1117/12.48060

1 February 1991 Neutron transmutation doping of silicon in the VVR-S type nuclear reactor

Eugenia T. Halmagean

Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.48060
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

The design and realisation of NTD Silicon rods in the vertical channel 45/6 of the VVRS Nuclear Reactor from Mgurele Bucharest is described. Special attention was paid to the 0th''0f ratio influence on the thermal annealing done in order to remove neutron radiation damage. An optimal way achieved for obtaining best longitudinal resistivity distribution on rods is presented. The evolution of the defects was studied using optical and resonance methods. Some mechanisms explaining the radiation damage and its removal by means of a proper thermal treatment are exposed.

Citation Download Citation

Eugenia T. Halmagean "Neutron transmutation doping of silicon in the VVR-S type nuclear reactor", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); https://doi.org/10.1117/12.48060

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