Relaxation-rate of phonon momentum in semiconductors

Rita Gupta; Brian K. Ridley

doi:10.1117/12.24465

1 February 1991 Relaxation-rate of phonon momentum in semiconductors

Rita Gupta, Brian K. Ridley

Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24465
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

In transport the creation of hot LU phonons causes a reduction in the carrier energy relaxation rate but an enhancement of the momentum relaxation rate. The magnitude of the latter determines the drift velocity attainable at high electric fields - which in turn limits the speed of devices such as FETs. How big this effect is depends on the rate of relaxation of phonon drift. Mechanisms for this relaxation are discussed and phonon-momentum relaxation rates are calculated for bulk and layered structures. Processes considered include the FrOhlich interaction with charged impurities phonon-phonon scattering and scattering at interface irregularities. We conclude that the quality of the material structure is crucial.

Citation Download Citation

Rita Gupta and Brian K. Ridley "Relaxation-rate of phonon momentum in semiconductors", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); https://doi.org/10.1117/12.24465

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