Cleaved surfaces of high Tc films for making SNS structures

Ichiro Takeuchi; Jaw Shen Tsai; Hisanao Tsuge; Noritsuga Matsukura; Sadahiko Miura; T. Yoshitake; Yoshikatsu Kojima; Shinji Matsui

doi:10.1117/12.25736

1 March 1991 Cleaved surfaces of high Tc films for making SNS structures

Ichiro Takeuchi, Jaw Shen Tsai, Hisanao Tsuge, Noritsuga Matsukura, Sadahiko Miura, T. Yoshitake, Yoshikatsu Kojima, Shinji Matsui

Author Affiliations +

Proceedings Volume 1394, Progress In High-Temperature Superconducting Transistors and Other Devices; (1991) https://doi.org/10.1117/12.25736
Event: Processing Integration, 1990, Santa Clara, CA, United States

Abstract

In exploring the feasibility of fabricating high Tc SNS Josephson junctions with well-defined and clean SN interfaces, have been cleaved epitaxial thin films of Y-Ba-Cu-O and Bi-Sr-Ca-Cu-O of various crystal orientations in vacuum while the evaporation of a noble metal is taking place. The samples had structures which allowed in situ formation of SNS junctions when the films were cleaved together with substrate with the area of the SN interfaces defined by the revealed cross-sectional edge surfaces of the films. Electrical measurements of the resulting junctions show that oxide/metal interfaces possess contact resistance in the order of 10 to the 9th to 10 to the 8th ohm-sq cm which is at least two orders of magnitude larger than that of similarly made SN interfaces with metallic superconductors. The nature of this interface and the factors influencing and giving rise to the contact resistance are discussed.

Citation Download Citation

Ichiro Takeuchi, Jaw Shen Tsai, Hisanao Tsuge, Noritsuga Matsukura, Sadahiko Miura, T. Yoshitake, Yoshikatsu Kojima, and Shinji Matsui "Cleaved surfaces of high Tc films for making SNS structures", Proc. SPIE 1394, Progress In High-Temperature Superconducting Transistors and Other Devices, (1 March 1991); https://doi.org/10.1117/12.25736

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