Growth of silicon nitride by PECVD

V. Jayan; Dev Alok; P. R. Vaya

doi:10.1117/12.57013

1 February 1992 Growth of silicon nitride by PECVD

V. Jayan, Dev Alok, P. R. Vaya

Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.57013
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India

Abstract

Silicon nitride and silicon oxynitride films were grown using silane and locally available nitrogen and ammonia by PECVD technique. The results of structural characterization by IR absorption and ellipsometry studies are reported. MNS test structures were fabricated and a surface state density of approximately 10¹¹ cm^-2 was obtained from C-V measurements. Study on the probable current condition mechanism in these films showed results consistent with Frenkel-Poole mechanism.

Citation Download Citation

V. Jayan, Dev Alok, and P. R. Vaya "Growth of silicon nitride by PECVD", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); https://doi.org/10.1117/12.57013

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