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1 October 1991 Modified active layer for reliable efficient Gunn diodes
J. Gorelik
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Proceedings Volume 1576, 16th International Conference on Infrared and Millimeter Waves; 157612 (1991) https://doi.org/10.1117/12.2297751
Event: 16th International Conference on Infrared and Millimeter Waves, 1991, Lausanne, Switzerland
Abstract
A structure of active layer for relieble efficient gunn diodes is suggested. Such layer was grown by MBE and good gunn diodes were achieved.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
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J. Gorelik "Modified active layer for reliable efficient Gunn diodes", Proc. SPIE 1576, 16th International Conference on Infrared and Millimeter Waves, 157612 (1 October 1991); https://doi.org/10.1117/12.2297751
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KEYWORDS
Diodes
Electrical engineering
Electronic components
Extremely high frequency
Field effect transistors
Gallium arsenide
Semiconducting wafers
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