Paper
1 February 1992 Application-specific integrated processing for ULSI
James E. Nulty, Joseph A. Maher
Author Affiliations +
Proceedings Volume 1593, Dry Etch Technology; (1992) https://doi.org/10.1117/12.56920
Event: Microelectronic Processing Integration, 1991, San Jose, CA, United States
Abstract
ULSI device manufacturing requires capital equipment manufacturers to deliver state of the art performance, particle-free process environments, and high uptime. With critical dimensions of 0.5 ? and below, essentially perfect etching results are required to meet device requirements. Gate structures, once simple poly-si types, are now multiple films of poly-si plus silicide. Contact hole etching to silicon requires damage free and polymer free surfaces following etch. Metallizations, once single aluminum alloy films, are now complex refractory metal/aluminum/refractory metal sandwiches. Multiple etch steps are required to successfully process these layers. Drytek has manufactured integrated process equipment for the past six years. To meet the demand for ULSI, Drytek has developed the ASIQ™, or Application Specific Integrated Quad. Our paper will discuss the benefits of the ASIQ™ system concept for complex etch applications, where the use of different plasma sources on the same integrated process platform is required for near perfect etching results of ULSI devices.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
James E. Nulty and Joseph A. Maher "Application-specific integrated processing for ULSI", Proc. SPIE 1593, Dry Etch Technology, (1 February 1992); https://doi.org/10.1117/12.56920
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KEYWORDS
Etching

Semiconducting wafers

Oxides

Plasma

Ions

Manufacturing

Chemistry

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