Modeling of electron-beam-controlled diamond switches

Ralf Peter Brinkmann; Karl H. Schoenbach

doi:10.1117/12.59076

12 May 1992 Modeling of electron-beam-controlled diamond switches

Ralf Peter Brinkmann, Karl H. Schoenbach

Proceedings Volume 1632, Optically Activated Switching II; (1992) https://doi.org/10.1117/12.59076
Event: OE/LASE '92, 1992, Los Angeles, CA, United States

Abstract

As a material for high power solid state switches, diamond promises to outperform any other semiconductor material because of its high dielectric strength, high electron and hole mobility and its excellent thermal properties. With the conductance controlled by high energy electron- beams, which can be generated using standard vacuum tube technology, thin film diamond switches can be given a very simple and compact design. This manuscript discusses the promises and limitations of this novel switch concept on the basis of steady state and transient device simulation, and investigates in particular, the suitability of electron-beam controlled diamond switches for closing and opening applications.

Citation Download Citation

Ralf Peter Brinkmann and Karl H. Schoenbach "Modeling of electron-beam-controlled diamond switches", Proc. SPIE 1632, Optically Activated Switching II, (12 May 1992); https://doi.org/10.1117/12.59076

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