Experimental investigation of auger recombination processes in strained-layer quantum well systems

Mingcheng Wang; K. Kash; Chung-En Zah; Rajaram J. Bhat

doi:10.1117/12.137626

3 September 1992 Experimental investigation of auger recombination processes in strained-layer quantum-well systems

Mingcheng Wang, K. Kash, Chung-En Zah, Rajaram J. Bhat

Proceedings Volume 1675, Quantum Well and Superlattice Physics IV; (1992) https://doi.org/10.1117/12.137626
Event: Semiconductors '92, 1992, Somerset, NJ, United States

Abstract

To understand the feasibility of using strain to reduce the Auger recombination rate of 1.5 micrometers laser, we have directly measured the carrier lifetime in strained-layer InGaAs/AlGaInAs quantum well systems, using time-resolved photoluminescence measurements. We find that the Auger recombination rate can be reduced by applying either biaxial compressive or tensile strain. A longer radiative carrier lifetime is observed for the tensile-strained materials. The effect of strain and quantum confinement on the carrier lifetime is discussed.

Citation Download Citation

Mingcheng Wang, K. Kash, Chung-En Zah, and Rajaram J. Bhat "Experimental investigation of auger recombination processes in strained-layer quantum-well systems", Proc. SPIE 1675, Quantum Well and Superlattice Physics IV, (3 September 1992); https://doi.org/10.1117/12.137626

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