Long-wavelength strained-layer quantum-well lasers

Chung-En Zah; Rajaram J. Bhat; F. J. Favire; Bhadresh Pathak; Catherine Caneau; Nicholas C. Andreadakis; Paul S. D. Lin; Antoni S. Gozdz; Tien Pei Lee

doi:10.1117/12.137605

3 September 1992 Long-wavelength strained-layer quantum-well lasers

Chung-En Zah, Rajaram J. Bhat, F. J. Favire, Bhadresh Pathak, Catherine Caneau, Nicholas C. Andreadakis, Paul S. D. Lin, Antoni S. Gozdz, Tien Pei Lee

Author Affiliations +

Proceedings Volume 1675, Quantum Well and Superlattice Physics IV; (1992) https://doi.org/10.1117/12.137605
Event: Semiconductors '92, 1992, Somerset, NJ, United States

Abstract

We have studied the effect of strain on the laser threshold current density in the 1.3 and 1.55 micrometers wavelength regions using both GaInAsP/InP and AlGaInAs/InP material systems. Low threshold current densities have been obtained for both compressive- and tensile-strained quantum well lasers. We have also fabricated 20-wavelength distributed-feedback laser arrays using both compressive- and tensile-strained quantum well active layers. A wide optical gain spectrum and a sub-MHz linewidth have been demonstrated.

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Chung-En Zah, Rajaram J. Bhat, F. J. Favire, Bhadresh Pathak, Catherine Caneau, Nicholas C. Andreadakis, Paul S. D. Lin, Antoni S. Gozdz, and Tien Pei Lee "Long-wavelength strained-layer quantum-well lasers", Proc. SPIE 1675, Quantum Well and Superlattice Physics IV, (3 September 1992); https://doi.org/10.1117/12.137605

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