Raman scattering of LO bulk-like and interface modes in GaAs/AlAs superlattices

Zhao-Ping Wang; He Xiang Han; Guohua Li; Klaus H. Ploog

doi:10.1117/12.137597

3 September 1992 Raman scattering of LO bulk-like and interface modes in GaAs/AlAs superlattices

Zhao-Ping Wang, He Xiang Han, Guohua Li, Klaus H. Ploog

Proceedings Volume 1675, Quantum Well and Superlattice Physics IV; (1992) https://doi.org/10.1117/12.137597
Event: Semiconductors '92, 1992, Somerset, NJ, United States

Abstract

(GaAs)₆(AlAs)₆ sample was grown on [001]-oriented semi-insulating GaAs substrate by MBE. The Raman scattering was measured at room temperature and under off- and in-resonance conditions. The GaAs even and odd modes were observed in the polarized and depolarized spectra, respectively, while the interface modes appear in both configurations. The second-order Raman spectra show that the polarized spectra are composed of the overtones and combinations of the even and interface modes, while the depolarized spectra are composed of the combinations of one odd mode and one even mode or one interface mode.

Citation Download Citation

Zhao-Ping Wang, He Xiang Han, Guohua Li, and Klaus H. Ploog "Raman scattering of LO bulk-like and interface modes in GaAs/AlAs superlattices", Proc. SPIE 1675, Quantum Well and Superlattice Physics IV, (3 September 1992); https://doi.org/10.1117/12.137597

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