Vacancy-enhanced interdiffusion of quaternary quantum wells

Emil S. Koteles; A. N. M. Masu Choudhury; Boris S. Elman; Paul Melman; Ariel Levy; M. A. Koza; Rajaram J. Bhat

doi:10.1117/12.137583

3 September 1992 Vacancy-enhanced interdiffusion of quaternary quantum wells

Emil S. Koteles, A. N. M. Masu Choudhury, Boris S. Elman, Paul Melman, Ariel Levy, M. A. Koza, Rajaram J. Bhat

Proceedings Volume 1675, Quantum Well and Superlattice Physics IV; (1992) https://doi.org/10.1117/12.137583
Event: Semiconductors '92, 1992, Somerset, NJ, United States

Abstract

The use of vacancy enhanced interdiffusion to accurately and reproducibly modify quantum well (QW) shapes from abrupt (the square, as-grown shape) to rounded in a spatially selective manner has now been demonstrated in many binary and ternary lattice matched and strained material systems. The processing increased the effective bandgaps of the QWs significantly. We now report on vacancy enhanced interdiffusion studies in quaternary quantum wells (InGaAsP wells with InP barriers or InGaAs wells with InGaAsP barriers) grown nominally lattice matched on InP substrates using metalorganic vapor phase epitaxy. Essentially the same behavior with processing parameters was observed as in the previous systems with only slight changes due, probably, to modified strain. Thus it should be possible to utilize this simple process to integrate optoelectronic devices with differing functions in these long wavelength systems.

Citation Download Citation

Emil S. Koteles, A. N. M. Masu Choudhury, Boris S. Elman, Paul Melman, Ariel Levy, M. A. Koza, and Rajaram J. Bhat "Vacancy-enhanced interdiffusion of quaternary quantum wells", Proc. SPIE 1675, Quantum Well and Superlattice Physics IV, (3 September 1992); https://doi.org/10.1117/12.137583

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