Systematic optical study of InxGa1-xAs on InP using photoluminescence, photoreflectance, and micro-Raman spectroscopy

Joseph P. Estrera; Walter M. Duncan; Yung Chung Kao; H. Y. Liu; Patrick D. Stevens; E. A. Beam III

doi:10.1117/12.60447

1 July 1992 Systematic optical study of In_xGa_1-xAs on InP using photoluminescence, photoreflectance, and micro-Raman spectroscopy

Joseph P. Estrera, Walter M. Duncan, Yung Chung Kao, H. Y. Liu, Patrick D. Stevens, E. A. Beam III

Author Affiliations +

Proceedings Volume 1678, Spectroscopic Characterization Techniques for Semiconductor Technology IV; (1992) https://doi.org/10.1117/12.60447
Event: Semiconductors '92, 1992, Somerset, NJ, United States

Abstract

We present a systematic study of the optical and structural properties of InGaAs grown on InP:Fe by molecular beam epitaxy (MBE) and metalorganic molecular beam epitaxy (MOMBE). The properties of these films were measured using photoluminescence, photoreflectance, and micro-Raman spectroscopy and correlated to double-crystal x-ray diffractometry. Lineshape analysis of low temperature Fourier transform photoluminescence (FTPL) allowed the identification of four optical transitions; bound exciton, donor-to-acceptor pair, and two bands which are impurity or defect related. The band-gap energy to XRD composition, relationship demonstrates films off the lattice match composition are under biaxial strain. Room temperature photoreflectance (PR) with a complex Airy functional model were used to directly yield band-gap energies (light and heavy hole). The complex Airy lineshapes were applied to both intermediate electric field (Franz-Keldysh oscillations) and low field PR spectra illustrating that the complex Airy analysis represents a generalized treatment. We correlate the band-gap energies from the PR spectral fits to those determined from PL measurements. Micro-Raman spectroscopy was performed in the <100> and <011> backscattering directions to identify four phonon modes; InAs-like TO (226 cm^-1), InAs-like LO (233 cm^-1), GaAs-like TO (255 cm^-1), and GaAs-like LO (270 cm^-1), and one alloy disorder mode R^* (244 cm^-1) for InGaAs on InP. For all five Raman features, a linear relationship between the Raman frequency and composition was determined for near lattice matched conditions (0.04 < 1 - x < 0.52).

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Joseph P. Estrera, Walter M. Duncan, Yung Chung Kao, H. Y. Liu, Patrick D. Stevens, and E. A. Beam III "Systematic optical study of In_xGa_1-xAs on InP using photoluminescence, photoreflectance, and micro-Raman spectroscopy", Proc. SPIE 1678, Spectroscopic Characterization Techniques for Semiconductor Technology IV, (1 July 1992); https://doi.org/10.1117/12.60447

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