Single-photon turnstile device based on coulomb blockade of electron and hole tunneling in p-i-n heterojunctions

Atec Imamoglu; Y. Yamamoto

doi:10.1117/12.178522

30 June 1994 Single-photon turnstile device based on coulomb blockade of electron and hole tunneling in p-i-n heterojunctions

Atec Imamoglu, Y. Yamamoto

Author Affiliations +

Proceedings Volume 2146, Physics and Simulation of Optoelectronic Devices II; (1994) https://doi.org/10.1117/12.178522
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

We describe a single-photon turnstile device that is based on a double-barrier mesoscopic p-i-n heterojunction driven by an alternating voltage source. In such a semiconductor device, Coulomb blockade and quantum confinement effects together can suppress the quantum fluctuations usually associated with electron and hole injection processes. It is therefore possible to generate heralded single-photon states without the need for high-impedance current source. The present scheme promises high- precision photon-flux state and current standards, as the repetition rate of the single-photon states and the magnitude of the junction current are determined by the frequency of the alternating voltage source.

Citation Download Citation

Atec Imamoglu and Y. Yamamoto "Single-photon turnstile device based on coulomb blockade of electron and hole tunneling in p-i-n heterojunctions", Proc. SPIE 2146, Physics and Simulation of Optoelectronic Devices II, (30 June 1994); https://doi.org/10.1117/12.178522

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