Paper
30 June 1994 Theory of optical nonlinearities of coupled-band quantum wells with many-body effects
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Abstract
Nonlinear optical properties of lattice-matched and strained semiconductor quantum wells are computed using generalized optical Bloch equations. The equations combine the influence of many-body, strain and bandcoupling effects, within a consistent model for quasi-static screening that includes contributions from all occupied subbands in a single-plasmon-pole type approximation. Numerical solutions for the absorption and refractive index change of InGaAs-AlGaAs systems are presented in the quasi-equilibrium regime for a broad range of excitation conditions, from the low density excitonic regime to the highly excited gain region. Good agreement with recent experimental results is found.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mauro Fernandes Pereira Jr., Rolf H. Binder, and Stephan W. Koch "Theory of optical nonlinearities of coupled-band quantum wells with many-body effects", Proc. SPIE 2146, Physics and Simulation of Optoelectronic Devices II, (30 June 1994); https://doi.org/10.1117/12.178514
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KEYWORDS
Quantum wells

Absorption

Semiconductors

Nonlinear optics

Heterojunctions

Refractive index

Electrons

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