Improved proximity correction algorithm for electron-beam lithography

Wu Lu; Hao-Ying Shen; Jingxin X. Tao; Ning Gu; Yu Wei

doi:10.1117/12.175820

13 May 1994 Improved proximity correction algorithm for electron-beam lithography

Wu Lu, Hao-Ying Shen, Jingxin X. Tao, Ning Gu, Yu Wei

Proceedings Volume 2194, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing IV; (1994) https://doi.org/10.1117/12.175820
Event: SPIE's 1994 Symposium on Microlithography, 1994, San Jose, CA, United States

Abstract

An improved proximity effect correction method based on pattern division, which attempts to correct both for inter- and for intra-shape proximity effects, is proposed. The experimental results suggest that the algorithm has good convergence, fast data processing speed, and good correction effects. Compared with the method based on transform, our approach has apparent better correction effects.

Citation Download Citation

Wu Lu, Hao-Ying Shen, Jingxin X. Tao, Ning Gu, and Yu Wei "Improved proximity correction algorithm for electron-beam lithography", Proc. SPIE 2194, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing IV, (13 May 1994); https://doi.org/10.1117/12.175820

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