Advanced positive photoresists for practical deep-UV lithography

Norbert Muenzel; Heinz E. Holzwarth; Pasquale A. Falcigno; Hans-Thomas Schacht; Reinhard Schulz; Omkaram Nalamasu; Allen G. Timko; Elsa Reichmanis; Janet M. Kometani; Douglas R. Stone; Thomas X. Neenan; Edwin A. Chandross; Sydney G. Slater; M. D. Frey; Andrew J. Blakeney

doi:10.1117/12.175381

16 May 1994 Advanced positive photoresists for practical deep-UV lithography

Norbert Muenzel, Heinz E. Holzwarth, Pasquale A. Falcigno, Hans-Thomas Schacht, Reinhard Schulz, Omkaram Nalamasu, Allen G. Timko, Elsa Reichmanis, Janet M. Kometani, Douglas R. Stone, Thomas X. Neenan, Edwin A. Chandross, Sydney G. Slater, M. D. Frey, Andrew J. Blakeney

Author Affiliations +

Proceedings Volume 2195, Advances in Resist Technology and Processing XI; (1994) https://doi.org/10.1117/12.175381
Event: SPIE's 1994 Symposium on Microlithography, 1994, San Jose, CA, United States

Abstract

New positive tone deep UV resists with enhanced post-exposure delay (PED) latitude and process latitude are presented. Additives and functionalized sulfone terpolymers are tailored to optimize the dissolution properties and process stability. Adjustment of the dissolution rate is used as a design criterion for optimizing the resist performance. RX 165 resist, optimized using the above criteria, exhibits 0.25 micron line/space resolution, 0.8 micrometers focus latitude at 0.275 micrometers resolution, and 1 hour post exposure delay latitude.

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Norbert Muenzel, Heinz E. Holzwarth, Pasquale A. Falcigno, Hans-Thomas Schacht, Reinhard Schulz, Omkaram Nalamasu, Allen G. Timko, Elsa Reichmanis, Janet M. Kometani, Douglas R. Stone, Thomas X. Neenan, Edwin A. Chandross, Sydney G. Slater, M. D. Frey, and Andrew J. Blakeney "Advanced positive photoresists for practical deep-UV lithography", Proc. SPIE 2195, Advances in Resist Technology and Processing XI, (16 May 1994); https://doi.org/10.1117/12.175381

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