Paper
16 May 1994 Structure-property relationship in acetal-based chemically amplified three-component DUV resist
Munirathna Padmanaban, Yoshiaki Kinoshita, Takanori Kudo, Thomas J. Lynch, Seiya Masuda, Yuko Nozaki, Hiroshi Okazaki, Georg Pawlowski, Klaus Juergen Przybilla, Horst Roeschert, Walter Spiess, Natusmi Suehiro, Horst Wengenroth
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Abstract
AZ DX series are chemically amplified, three component resists based on a poly(4-hydroxystyrene-co-3-methyl-4-hydroxystyrene) matrix resin, a poly(N,O-acetal) dissolution inhibitor, and a bis(arylsulfonyl)diazomethane acid generator. The previously described AZ DX 46 is an environmentally and delay time stable, high performance resist capable of lineating structures down to 0.23 micrometers . The material contains a photoactive base to reduce the delay time effects. In this paper the influence of styrene units in the matrix resin, and some new polyacetals on the performance of the resist in comparison to the above mentioned standard formulation AZ DX 46.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Munirathna Padmanaban, Yoshiaki Kinoshita, Takanori Kudo, Thomas J. Lynch, Seiya Masuda, Yuko Nozaki, Hiroshi Okazaki, Georg Pawlowski, Klaus Juergen Przybilla, Horst Roeschert, Walter Spiess, Natusmi Suehiro, and Horst Wengenroth "Structure-property relationship in acetal-based chemically amplified three-component DUV resist", Proc. SPIE 2195, Advances in Resist Technology and Processing XI, (16 May 1994); https://doi.org/10.1117/12.175392
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KEYWORDS
Deep ultraviolet

Lithography

Scanning electron microscopy

Absorption

Polymers

Etching

Semiconducting wafers

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