Application of CVD antireflective-layer process for sub-half-micrometer devices

Hideaki Mito; Yoshiyuki Tani; Yoshimitsu Okuda; Yoshihiro Todokoro; Toshiaki Tatsuta; Mikio Sawai; Osamu Tsujii

doi:10.1117/12.175472

17 May 1994 Application of CVD antireflective-layer process for sub-half-micrometer devices

Hideaki Mito, Yoshiyuki Tani, Yoshimitsu Okuda, Yoshihiro Todokoro, Toshiaki Tatsuta, Mikio Sawai, Osamu Tsujii

Proceedings Volume 2197, Optical/Laser Microlithography VII; (1994) https://doi.org/10.1117/12.175472
Event: SPIE's 1994 Symposium on Microlithography, 1994, San Jose, CA, United States

Abstract

The lithographic performance and process applicability of the anti-reflective-layer (ARL) process using amorphous carbon have been studied in i-line and KrF excimer laser lithography. The ARL thickness of 30 nm was used. With ARL, the reflectivity from the silicon substrate reduced to less than 30%. The reduction of the reflectivity with ARL process was effective not only for the silicon substrate but also for the tungsten silicide substrate and aluminum substrate. The pattern profile and depth of focus in the resist on ARL were almost the same as those without ARL. The ARL process has been successfully applied for the fabrication of 0.35 micrometers CMOS polycide gate fabrication using i-line lithography and 0.35 micrometers DRAM aluminum wiring using excimer laser lithography.

Citation Download Citation

Hideaki Mito, Yoshiyuki Tani, Yoshimitsu Okuda, Yoshihiro Todokoro, Toshiaki Tatsuta, Mikio Sawai, and Osamu Tsujii "Application of CVD antireflective-layer process for sub-half-micrometer devices", Proc. SPIE 2197, Optical/Laser Microlithography VII, (17 May 1994); https://doi.org/10.1117/12.175472

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