Laser deposition of GaAs thin films

Vladimir N. Burimov; Valerie L. Popkov; Alexander N. Zherikhin

doi:10.1117/12.184784

7 September 1994 Laser deposition of GaAs thin films

Vladimir N. Burimov, Valerie L. Popkov, Alexander N. Zherikhin

Proceedings Volume 2207, Laser Materials Processing: Industrial and Microelectronics Applications; (1994) https://doi.org/10.1117/12.184784
Event: Europto High Power Lasers and Laser Applications V, 1994, Vienna, Austria

Abstract

The GaAs thin films were obtained by laser ablation technique. GaAs target and KrF excimer laser radiation ((lambda) equals 248 nm, E equals 0.3 J) were used. We excluded the drops, generated during the target sputtering, due to using special equipment. The deposition temperature was varied from 150 up to 450 degree(s)C. The x-ray analysis have showed that films have a monocrystalline structure at some temperatures. The interface thickness was tested by Auger method. These measurements showed that interface thickness is less than 5 nm. Using this laser ablation technique we have produced the p-n junction.

Citation Download Citation

Vladimir N. Burimov, Valerie L. Popkov, and Alexander N. Zherikhin "Laser deposition of GaAs thin films", Proc. SPIE 2207, Laser Materials Processing: Industrial and Microelectronics Applications, (7 September 1994); https://doi.org/10.1117/12.184784

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available