Silicon shaping mask for electron-beam cell projection lithography

Hidetoshi Satoh; Yoshinori Nakayama; Norio Saitou; T. Kagami

doi:10.1117/12.191922

3 November 1994 Silicon shaping mask for electron-beam cell projection lithography

Hidetoshi Satoh, Yoshinori Nakayama, Norio Saitou, T. Kagami

Proceedings Volume 2254, Photomask and X-Ray Mask Technology; (1994) https://doi.org/10.1117/12.191922
Event: Photomask Japan '94, 1994, Kawasaki City, Kanagawa, Japan

Abstract

A novel silicon shaping mask for electron-beam cell projection lithography has been developed for use in the HL-800D system, a high-throughput electron-beam direct writing system for ULSI device fabrication. This shaping mask has 125 shaping apertures corresponding to the ULSI's cell patterns and 25 square apertures for the conventional VSB method. In fabricating of the shaping masks, advanced ULSI processes are applied. In particular, an SOI wafer contributes to mask thickness uniformity and low-temperature etching with microwave plasma enables the side wall angle to be perpendicular. The fabrication errors for each aperture size are less than 0.25 micrometers . Consequently, the beam size errors on the wafer are less than 0.01 micrometers due to the 1/25 reduction ratio of the HL-800D system. By using the HL-800D cell projection, ULSI patterns corresponding to a 256-Mb DRAM gate level were exposed. As this experimental results, the average value for patterns designed to be 0.20 micrometers is 0.197 micrometers with a standard deviation of 0.013 micrometers .

Citation Download Citation

Hidetoshi Satoh, Yoshinori Nakayama, Norio Saitou, and T. Kagami "Silicon shaping mask for electron-beam cell projection lithography", Proc. SPIE 2254, Photomask and X-Ray Mask Technology, (3 November 1994); https://doi.org/10.1117/12.191922

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