Paper
14 September 1994 Photocurrent imaging of silicon wafers using electrolyte contacts
Thomas Falter, Dietmar Hellmann, Peter Eichinger
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Abstract
The photocurrent response of Silicon wafers scanned by laser beams of variable wavelength and intensity is evaluated to assess process-induced defects in their lateral and in-depth distribution, as well as in their chemical nature. Large-area transparent contacts to bare wafers, for current collection and surface passivation, are made by electrolyte chambers (ELYMAT principle). The application of the analytical technique is discussed for a variety of process development tasks, among them evaluation of quartz quality impact on bulk minority carrier lifetime and surface-near defect formation, intrinsic gettering and DZ characterization, as well as oxide interface quality.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Thomas Falter, Dietmar Hellmann, and Peter Eichinger "Photocurrent imaging of silicon wafers using electrolyte contacts", Proc. SPIE 2337, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing, (14 September 1994); https://doi.org/10.1117/12.186635
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Cited by 5 scholarly publications.
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KEYWORDS
Semiconducting wafers

Silicon

Metals

Semiconductor lasers

Diffusion

Contamination

Interfaces

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