Anomalous damage behavior of BF2+ implantation in silicon

Chenglu Lin; Zu Yao Zhou; Xiao Qin Li; Shichang Zou; Peter L. F. Hemment

doi:10.1117/12.190740

26 October 1994 Anomalous damage behavior of BF₂⁺ implantation in silicon

Chenglu Lin, Zu Yao Zhou, Xiao Qin Li, Shichang Zou, Peter L. F. Hemment

Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994) https://doi.org/10.1117/12.190740
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China

Abstract

The anomalous damage behavior of BF₂⁺ implantation into silicon at 300 K and 77 K has been investigated by using grazing angle Rutherford backscattering and channeling in combined with transmission electron microscopy. The damage or the amorphous layer produced by BF₂⁺ implantation is different from other heavier ions (> ²⁷Al⁺). For BF₂⁺ implantation at 300 K, there are two damage peaks, one at a depth near the projectile range of the ions, the other at the near surface. While for BF₂⁺ implantation at 77 K, the damage or the amorphous layer first occurs at the surface, then the amorphous layer is extended to the bulk of silicon with increasing does.

Citation Download Citation

Chenglu Lin, Zu Yao Zhou, Xiao Qin Li, Shichang Zou, and Peter L. F. Hemment "Anomalous damage behavior of BF₂⁺ implantation in silicon", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); https://doi.org/10.1117/12.190740

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