Growth and characterization of boron delta function shaped doping layer in silicon by molecular beam epitaxy

X. J. Chen; Q. H. Wang; D. W. Gong; Y. Yang; Hong Quiang Lu; Fang Lu; Y. L. Fan; Xue Kun Lu; Z. M. Jiang; Xiang-Jiu Zhang; Xun Wang

doi:10.1117/12.190734

26 October 1994 Growth and characterization of boron delta function shaped doping layer in silicon by molecular beam epitaxy

X. J. Chen, Q. H. Wang, D. W. Gong, Y. Yang, Hong Quiang Lu, Fang Lu, Y. L. Fan, Xue Kun Lu, Z. M. Jiang, Xiang-Jiu Zhang, Xun Wang

Author Affiliations +

Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994) https://doi.org/10.1117/12.190734
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China

Abstract

We have successfully realized boron (delta) -function-shaped doping in the silicon epilayer by molecular beam epitaxy (MBE) with a B₂O₃ doping source. The sheet boron concentration N_(Beta ) of the boron (delta) doping layer can exceed 3.4 X 10¹⁴ cm^-2. The transmission electron microscopy (TEM) cross-section image shows the width of the (delta) doping layer is about 1.5 nm. Meanwhile, we have applied in situ Auger electron spectroscopy (AES) to quantitatively analyze the relationship of boron (delta) doping sheet concentration N_(Beta ) with the (delta) doping time. With the substrate temperature of 650 degree(s)C and the doping source temperature of 900 degree(s)C, for N_(Beta ) < 3.4 X 10¹⁴ cm^-2 (1/2 monolayer), boron incorporation onto Si (100) is proportional to the (delta) doping time, and the sticking coefficient is 4.4 X 10¹³ cm^-2/min; while for N_(Beta ) > 3.4 X 10¹⁴ cm^-2, the incorporation tends to saturate. The residual oxygen has not been detected even if N_(Beta ) is up to 4.4 X 10¹⁴ cm^-2.

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X. J. Chen, Q. H. Wang, D. W. Gong, Y. Yang, Hong Quiang Lu, Fang Lu, Y. L. Fan, Xue Kun Lu, Z. M. Jiang, Xiang-Jiu Zhang, and Xun Wang "Growth and characterization of boron delta function shaped doping layer in silicon by molecular beam epitaxy", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); https://doi.org/10.1117/12.190734

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