Study of GaSb Schottky contacts

Yan-Kuin Su; H. Kuan; P. H. Chang; ShuWoei Chiou

doi:10.1117/12.190775

26 October 1994 Study of GaSb Schottky contacts

Yan-Kuin Su, H. Kuan, P. H. Chang, ShuWoei Chiou

Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994) https://doi.org/10.1117/12.190775
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China

Abstract

Various metals were evaporated on the n-GaSb epilayer grown by low pressure metal organic chemical vapor deposition (MOCVD) to form the Schottky contact. The barrier height is almost independent of the work function and is determined entirely by the doping and surface property of the semiconductor. These results are in good agreement with Bardeen model. The carrier transport of Pd/n-GaSb contacts was studied and analyzed to discuss the effect of doping level of GaSb epilayer on the barrier height of the contact.

Citation Download Citation

Yan-Kuin Su, H. Kuan, P. H. Chang, and ShuWoei Chiou "Study of GaSb Schottky contacts", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); https://doi.org/10.1117/12.190775

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