Paper
9 June 1995 Positive chemically amplified resist for ArF excimer laser lithography composed of a novel transparent photoacid generator and an alicyclic terpolymer
Kaichiro Nakano, Katsumi Maeda, Shigeyuki Iwasa, Takeshi Ohfuji, Etsuo Hasegawa
Author Affiliations +
Abstract
A new positive chemically amplified resist which consists of a novel photoacid generator NEALS (new alkylsulfonium salt) and methacrylate terpolymer with tricyclodecanyl group (TCDA) has been developed. NEALS shows good thermal stability up to 151 degree(s)C, high transparency and high acid generation efficiency for an ArF excimer laser exposure. A new base polymer with TCDA groups demonstrated high transparency (69.3%/micrometers ), high thermal stability up to 141 degree(s)C, a good dry-etching resistance and high solubility for an aqueous base (tetramethylammonium hydroxide) developer. A 0.20 micrometers lines and spaces pattern has been resolved using an ArF excimer laser exposure system (NA equals 0.55).
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kaichiro Nakano, Katsumi Maeda, Shigeyuki Iwasa, Takeshi Ohfuji, and Etsuo Hasegawa "Positive chemically amplified resist for ArF excimer laser lithography composed of a novel transparent photoacid generator and an alicyclic terpolymer", Proc. SPIE 2438, Advances in Resist Technology and Processing XII, (9 June 1995); https://doi.org/10.1117/12.210354
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CITATIONS
Cited by 21 scholarly publications and 3 patents.
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KEYWORDS
Excimer lasers

Lithography

Polymers

Transparency

Etching

Chemically amplified resists

Resistance

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