Lithoraphy for ULSI

Shinji Okazaki

doi:10.1117/12.209196

22 May 1995 Lithoraphy for ULSI

Shinji Okazaki

Proceedings Volume 2439, Integrated Circuit Metrology, Inspection, and Process Control IX; (1995) https://doi.org/10.1117/12.209196
Event: SPIE's 1995 Symposium on Microlithography, 1995, Santa Clara, CA, United States

Abstract

ULSI has heavily depended on develops in optical lithography. However, optical lithography is now facing a major obstacle due to exposure wavelength limitations. To overcome this obstacle, not only the use of shorter wavelengths, but also such new technologies as super-resolution techniques, electron beams, and X-ray lithography are being intensively investigated. This paper reviews recent developments in these technologies and discusses the major issues. The difference in lithographic activities between Japan and the U.S. is also be discussed. Finally, recent developments in lithography for experimental 1 -Gb DRAMs are presented.

Citation Download Citation

Shinji Okazaki "Lithoraphy for ULSI", Proc. SPIE 2439, Integrated Circuit Metrology, Inspection, and Process Control IX, (22 May 1995); https://doi.org/10.1117/12.209196

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