Paper
22 May 1995 High-transition-temperature shape memory alloy film
A. David Johnson, Valery V. Martynov, Erik J. Shahoian
Author Affiliations +
Abstract
Using conventional magnetron sputtering deposition processes three different types of shape memory alloys (FeNi based, CuAl based and TiNi based) were examined as potential candidates for the production of high temperature SMA thin film. CuAlNi and TiNiHf SMA were successfully deposited on silicon wafers and thin films of 4 - 20 micrometers were produced. After annealing at approximately equals 500 degree(s)C both CuAlNi and TiNiHf films exhibited reversible high temperature martensitic transition. For CuAlNi thin films, annealing itself was found to be inadequate for obtaining transformation intervals corresponding to that of the target. To deal with the problem it is expected that additional quenching after solid solution heat treatment will be necessary. Of the three alloys examined, the most promising candidate for high temperature thin film microactuators is TiNiHf. It was found that by changing the Hf content in the target, the transformation start temperature of thin films can be easily adjusted in a temperature range from 100 degree(s)C to 200 degree(s)C.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. David Johnson, Valery V. Martynov, and Erik J. Shahoian "High-transition-temperature shape memory alloy film", Proc. SPIE 2441, Smart Structures and Materials 1995: Smart Materials, (22 May 1995); https://doi.org/10.1117/12.209796
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KEYWORDS
Shape memory alloys

Thin films

Silicon

Sputter deposition

Semiconducting wafers

Silicon films

Annealing

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