Highly reliable CVD-stacked oxynitride gate dielectric fabricated by in-situ rapid thermal multiprocessing

Jason Yan; L. K. Han; Dim-Lee Kwong

doi:10.1117/12.221440

22 September 1995 Highly reliable CVD-stacked oxynitride gate dielectric fabricated by in-situ rapid thermal multiprocessing

Jason Yan, L. K. Han, Dim-Lee Kwong

Author Affiliations +

Proceedings Volume 2635, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis; (1995) https://doi.org/10.1117/12.221440
Event: Microelectronic Manufacturing '95, 1995, Austin, TX, United States

Abstract

High-quality CVD stacked oxynitride gate dielectrics have been fabricated by in-situ rapid thermal multiprocessing. Bottom thin oxynitrides were formed by RTP of Si in the NO or N₂O ambient, followed by RT-CVD deposition of SiO₂ films using SiH₄ and N₂O. The stacked dielectrics were then subjected to in-situ rapid thermal annealing in an O₂ ambient. Results show that CVD stacked oxynitride gate dielectrics have improved endurance to interface state degradation, higher charge to breakdown values, and significantly reduced defect densities compared to control thermal gate oxide.

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Jason Yan, L. K. Han, and Dim-Lee Kwong "Highly reliable CVD-stacked oxynitride gate dielectric fabricated by in-situ rapid thermal multiprocessing", Proc. SPIE 2635, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis, (22 September 1995); https://doi.org/10.1117/12.221440

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