Paper
19 September 1995 Mechanical loss measurements of vacuum-operated, single-crystal silicon microresonators
Robert E. Mihailovich, Noel C. MacDonald
Author Affiliations +
Proceedings Volume 2639, Micromachining and Microfabrication Process Technology; (1995) https://doi.org/10.1117/12.221291
Event: Micromachining and Microfabrication, 1995, Austin, TX, United States
Abstract
The quality factor of vacuum-operated single-crystal silicon microresonators was measured to identify their important sources of mechanical loss when medium-related loss is absent. The microresonators were torsional structures consisting of beams of width approximately 0.7 micrometers , and fabricated by reactive-ion-etching from the single-crystal silicon substrate. For torsional microresonators having Q's approximately 50,000, doping-impurity and support- related losses do not seem to be significant. Rather, the reactive-ion-etched surfaces of the microstructures appear to be the dominant source of mechanical loss. This etched-surface loss can be halved by thermal oxidation, resulting in microresonators with Q's consistently 80,000- 100,000. A model for this surface-related loss is presented.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Robert E. Mihailovich and Noel C. MacDonald "Mechanical loss measurements of vacuum-operated, single-crystal silicon microresonators", Proc. SPIE 2639, Micromachining and Microfabrication Process Technology, (19 September 1995); https://doi.org/10.1117/12.221291
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KEYWORDS
Microresonators

Resonators

Silicon

Metals

Oxides

Doping

Electrodes

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