Diffusion limitations in high-resolution lithography

Lothar Bauch; Ulrich A. Jagdhold; Monika Boettcher; Georg G. Mehliss

doi:10.1117/12.241847

14 June 1996 Diffusion limitations in high-resolution lithography

Lothar Bauch, Ulrich A. Jagdhold, Monika Boettcher, Georg G. Mehliss

Proceedings Volume 2724, Advances in Resist Technology and Processing XIII; (1996) https://doi.org/10.1117/12.241847
Event: SPIE's 1996 International Symposium on Microlithography, 1996, Santa Clara, CA, United States

Abstract

The reduction of the resist thickness, needed for high resolution lithography, increases thin film effects. The PRIME-process is used as an example of high resolution lithography (structure width less than 0.2 micrometer). In the paper the influence of the resist thickness and the DNQ-diffusion is studied by simulations and experiments. As a result it is to conclude, that the diffusion of DNQ has to be minimized to about 20 nm caused by the lateral dimension of the structures.

Citation Download Citation

Lothar Bauch, Ulrich A. Jagdhold, Monika Boettcher, and Georg G. Mehliss "Diffusion limitations in high-resolution lithography", Proc. SPIE 2724, Advances in Resist Technology and Processing XIII, (14 June 1996); https://doi.org/10.1117/12.241847

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