Sub-0.35-um critical dimension metrology using atomic force microscopy

Kathryn Guarini; Bhanwar Singh; William H. Arnold

doi:10.1117/12.240111

21 May 1996 Sub-0.35-um critical dimension metrology using atomic force microscopy

Kathryn Guarini, Bhanwar Singh, William H. Arnold

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Proceedings Volume 2725, Metrology, Inspection, and Process Control for Microlithography X; (1996) https://doi.org/10.1117/12.240111
Event: SPIE's 1996 International Symposium on Microlithography, 1996, Santa Clara, CA, United States

Abstract

The critical dimension atomic force microscope (CD-AFM) provides a number of unique capabilities for in-line metrology. In this paper, we evaluate the CD-AFM as a metrology tool and discuss its capabilities and limitations for semiconductor process development and production. We report that linewidth measurements made by the CD-AFM correlate well with those made by all other techniques generally used to measure submicron features, including scanning electron microscopy and electrical probing. Measurement repeatability is limited primarily by changes in probe tip shape with increased use. When the tip is accurately calibrated, this tool provides width, height, and slope data on etched and photoresist features with nanometer resolution. Increased throughput and improved automation may make the CD- AFM a key metrology tool for next-generation process development.

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Kathryn Guarini, Bhanwar Singh, and William H. Arnold "Sub-0.35-um critical dimension metrology using atomic force microscopy", Proc. SPIE 2725, Metrology, Inspection, and Process Control for Microlithography X, (21 May 1996); https://doi.org/10.1117/12.240111

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KEYWORDS

Calibration

Critical dimension metrology

Photoresist materials

Metrology

Atomic force microscopy

Semiconducting wafers

Scanning electron microscopy

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