Migrating deep-UV lithography to the 0.25-um regime: issues and outlook

Kevin J. Orvek; Sasha K. Dass; Len Gruber; Scott A. Dumford; MaryAnn Piasecki; Gregory W. Pollard; Ian D. Fink

doi:10.1117/12.240914

7 June 1996 Migrating deep-UV lithography to the 0.25-um regime: issues and outlook

Kevin J. Orvek, Sasha K. Dass, Len Gruber, Scott A. Dumford, MaryAnn Piasecki, Gregory W. Pollard, Ian D. Fink

Proceedings Volume 2726, Optical Microlithography IX; (1996) https://doi.org/10.1117/12.240914
Event: SPIE's 1996 International Symposium on Microlithography, 1996, Santa Clara, CA, United States

Abstract

Experimental data from the current 0.35micrometers deep-UV process was used in conjunction with simulations of future 0.25micrometers lithography to provide a means of evaluating the possibility of meeting the National Lithography Roadmap goals for CD and overlay. This study found that the CD control issue has too many components to be captured by the single number listed in the Roadmap. The current magnitude of many of these components looks too large to justify their shrinking down to values consistent with the general 30 percent shrinks characteristic of our industry. For overlay, the Roadmap value is clearly attainable for matched steppers in controlled tests, however unlikely for daily product results on random- matched steppers in a production environment. This study also examined the impact of pushing deep-UV technology to the 0.25micrometers regime on the process latitudes of dense/isolated lines and upon the poly endcap.

Citation Download Citation

Kevin J. Orvek, Sasha K. Dass, Len Gruber, Scott A. Dumford, MaryAnn Piasecki, Gregory W. Pollard, and Ian D. Fink "Migrating deep-UV lithography to the 0.25-um regime: issues and outlook", Proc. SPIE 2726, Optical Microlithography IX, (7 June 1996); https://doi.org/10.1117/12.240914

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