Simultaneous Transfer Of A Fine Pattern On Two Complementary Or Identical Replicas By X-Ray Lithography

E. Rammos; V. Chalmeton; Y. Le Jean

doi:10.1117/12.931876

28 July 1981 Simultaneous Transfer Of A Fine Pattern On Two Complementary Or Identical Replicas By X-Ray Lithography

E. Rammos, V. Chalmeton, Y. Le Jean

Proceedings Volume 0275, Semiconductor Microlithography VI; (1981) https://doi.org/10.1117/12.931876
Event: 1981 Microlithography Conferences, 1981, San Jose, United States

Abstract

X-ray masks being fragile and expensive, we elaborate a duplication method giving replicas exactly iden-tical or complementary. Using the X-ray transparency of X-ray mask substrates, we make in a simultaneous exposure two replicas of a master-mask, their polarity being determined by that of the two used resists. A careful calculation ensure a correct exposure of the two resist layers by synchrotron radiation. Examples are given for 2 positive or 1 positive 1 negative resists. The polarity inversion of PMMA is also used.

Citation Download Citation

E. Rammos, V. Chalmeton, and Y. Le Jean "Simultaneous Transfer Of A Fine Pattern On Two Complementary Or Identical Replicas By X-Ray Lithography", Proc. SPIE 0275, Semiconductor Microlithography VI, (28 July 1981); https://doi.org/10.1117/12.931876

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