Optical Detection And Minimization Of Surface Overlayers On Semiconductors Using Spectroscopic Ellipsometry

D. E. Aspnes; A. A. Studna

doi:10.1117/12.931711

30 April 1981 Optical Detection And Minimization Of Surface Overlayers On Semiconductors Using Spectroscopic Ellipsometry

D. E. Aspnes, A. A. Studna

Author Affiliations +

Proceedings Volume 0276, Optical Characterization Techniques for Semiconductor Technology; (1981) https://doi.org/10.1117/12.931711
Event: 1981 Microlithography Conferences, 1981, San Jose, United States

Abstract

Spectroscopic ellipsometry can be used to assess in real time the effectiveness of etching and cleaning methods in reducing the amount of unwanted interface material (oxides, contamination, pits, damage, etc.) at the surface of a semiconductor. However, we show that an unambiguous response denoting removal of interface material occurs only in certain wavelength ranges. We have applied this technique to determine chemical procedures that yield the sharpest dielectric discontinuities (smoothest and/or cleanest surfaces) for Si, Ge, and some III-V compound semiconductors.

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D. E. Aspnes and A. A. Studna "Optical Detection And Minimization Of Surface Overlayers On Semiconductors Using Spectroscopic Ellipsometry", Proc. SPIE 0276, Optical Characterization Techniques for Semiconductor Technology, (30 April 1981); https://doi.org/10.1117/12.931711

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