Materials and processing issues in the development of N2O/NO-based ultrathin oxynitride gate dielectrics for CMOS ULSI applications

Byeong Y. Kim; Dirk Wristers; Dim-Lee Kwong

doi:10.1117/12.250864

13 September 1996 Materials and processing issues in the development of N₂O/NO-based ultrathin oxynitride gate dielectrics for CMOS ULSI applications

Byeong Y. Kim, Dirk Wristers, Dim-Lee Kwong

Author Affiliations +

Proceedings Volume 2875, Microelectronic Device and Multilevel Interconnection Technology II; (1996) https://doi.org/10.1117/12.250864
Event: Microelectronic Manufacturing 1996, 1996, Austin, TX, United States

Abstract

This paper reviews recent developments in N₂O- and NO- based oxynitride gate dielectrics for CMOS ULSI applications. The motivations and significant advantages of N₂O/NO-based ultrathin oxynitride gate dielectrics for dual-gate CMOS ULSI are reviewed. Results will be presented to demonstrate the superior device reliability of ultra thin N₂O/NO oxides over the control oxides, with particular focus on boron diffusion barrier properties, TDDB, and MOSFET hot carrier immunity.

Citation Download Citation

Byeong Y. Kim, Dirk Wristers, and Dim-Lee Kwong "Materials and processing issues in the development of N₂O/NO-based ultrathin oxynitride gate dielectrics for CMOS ULSI applications", Proc. SPIE 2875, Microelectronic Device and Multilevel Interconnection Technology II, (13 September 1996); https://doi.org/10.1117/12.250864

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available