GaAs/GaAlAs multiple quantum well electroreflectance modulators

Hongda Chen; Zhibiao Chen; Wen Gao; Rong Han Wu

doi:10.1117/12.253173

30 September 1996 GaAs/GaAlAs multiple quantum well electroreflectance modulators

Hongda Chen, Zhibiao Chen, Wen Gao, Rong Han Wu

Proceedings Volume 2891, Integrated Optoelectronics; (1996) https://doi.org/10.1117/12.253173
Event: Photonics China '96, 1996, Beijing, China

Abstract

In this paper, physical analyses on the characterization of the electroreflectance modulator are concerned, which include quantum confined Stark effect and asymmetric Fabry- Perot cavity effect and so on. Experimental results are provided to demonstrate the properties of normally-off and normally-on devices. The developed technology is used to tune the mode to the proper position to improve the contrast ratio of modulators.

Citation Download Citation

Hongda Chen, Zhibiao Chen, Wen Gao, and Rong Han Wu "GaAs/GaAlAs multiple quantum well electroreflectance modulators", Proc. SPIE 2891, Integrated Optoelectronics, (30 September 1996); https://doi.org/10.1117/12.253173

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