Optical study of the influence of oxygen on the synthesis of SiC-buried layer in Cz-Si and Fz-Si

V. A. Yukhimchuk; V. P. Melnik; B. N. Romanjuk; V. G. Popov; Nickolai I. Klyui

doi:10.1117/12.306247

20 April 1998 Optical study of the influence of oxygen on the synthesis of SiC-buried layer in Cz-Si and Fz-Si

V. A. Yukhimchuk, V. P. Melnik, B. N. Romanjuk, V. G. Popov, Nickolai I. Klyui

Proceedings Volume 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997; (1998) https://doi.org/10.1117/12.306247
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1997, Kiev, Ukraine

Abstract

The peculiarities of ion-beam synthesis of buried SiC layers in silicon wafers have been studied by Raman and infrared spectroscopy. The effect of oxygen and mechanical stresses on SiC layer formation has been also investigated. It was shown that compressive stresses and SiO₂ precipitates with the size larger than some critical value stimulate nucleation and formation of buried SiC layer.

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V. A. Yukhimchuk, V. P. Melnik, B. N. Romanjuk, V. G. Popov, and Nickolai I. Klyui "Optical study of the influence of oxygen on the synthesis of SiC-buried layer in Cz-Si and Fz-Si", Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); https://doi.org/10.1117/12.306247

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