Raman spectroscopy for 3D mapping of stress in CVD diamond

Igor I. Vlasov; Victor G. Ralchenko

doi:10.1117/12.328195

20 October 1998 Raman spectroscopy for 3D mapping of stress in CVD diamond

Igor I. Vlasov, Victor G. Ralchenko

Proceedings Volume 3484, Lasers in Synthesis, Characterization, and Processing of Diamond; (1998) https://doi.org/10.1117/12.328195
Event: Lasers in Synthesis, Characterization, and Processing of Diamond, 1997, Tashkent, Uzbekistan

Abstract

Spatial distribution of intrinsic stress in chemical vapor deposition (CVD) diamond films was studied by confocal micro-Raman spectroscopy. For this purpose the series of high quality diamond films were grown by microwave plasma enhanced CVD. Both film-forming and isolated individual crystals from 20 to 200 micrometers lateral size and of different growth orientations were analyzed. Stress mapping was held on the continuous film surfaces and in a bulk of the isolated crystals. In surface analysis the Raman probing with 2 micrometers spatial resolution was able to detect smooth changes of stress only for large enough, 100-200 micrometers , grains. Thus most of the measurements have been done for the free-standing film of 600 micrometers thickness, where the grins with such sizes predominate. In bulk analysis the resolution of the Raman probing degenerates, but common tendencies of stress behavior have been traced. It was found that the majority of the high local stress regions observed are located in the vicinity of the grain boundaries. In many cases it is the grain boundary that separates domains of compressive and tensile stress. This can be explained by forming of incoherent interfaces in coalescent or twin crystallites during the growth process.

Citation Download Citation

Igor I. Vlasov and Victor G. Ralchenko "Raman spectroscopy for 3D mapping of stress in CVD diamond", Proc. SPIE 3484, Lasers in Synthesis, Characterization, and Processing of Diamond, (20 October 1998); https://doi.org/10.1117/12.328195

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