BJT avalanche breakdown voltage improvement by introduction of a floating p-layer in the epitaxial collector region

Thomas Zimmer; M. Ndoye; N. Lewis; J. B. Duluc; Helene Fremont; Jean Paul Dom

doi:10.1117/12.323988

4 September 1998 BJT avalanche breakdown voltage improvement by introduction of a floating p-layer in the epitaxial collector region

Thomas Zimmer, M. Ndoye, N. Lewis, J. B. Duluc, Helene Fremont, Jean Paul Dom

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Proceedings Volume 3506, Microelectronic Device Technology II; (1998) https://doi.org/10.1117/12.323988
Event: Microelectronic Manufacturing, 1998, Santa Clara, CA, United States

Abstract

This paper describes a new method to improve the base- collector breakdown voltage of high frequency NPN bipolar transistor. It consists of introducing a suitable P floating region in the N collector by ion implantation or by molecular beam epitaxy. The basic profile of the intrinsic transistor is not changed. Computer device simulations show that a nearly 20% improvement of the base-collector breakdown voltage can be achieved in a common emitter configuration. Additional advantages are a reduction of the multiplication factor and an enhanced impact-ionization base current reversal voltage.

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Thomas Zimmer, M. Ndoye, N. Lewis, J. B. Duluc, Helene Fremont, and Jean Paul Dom "BJT avalanche breakdown voltage improvement by introduction of a floating p-layer in the epitaxial collector region", Proc. SPIE 3506, Microelectronic Device Technology II, (4 September 1998); https://doi.org/10.1117/12.323988

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KEYWORDS

Doping

Transistors

Computer simulations

Device simulation

Ion implantation

Ionization

Molecular beam epitaxy

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