Suspended thermal oxide trench isolation for SCS MEMS

Russell Y. Webb; Scott G. Adams; Noel C. MacDonald

doi:10.1117/12.325740

5 October 1998 Suspended thermal oxide trench isolation for SCS MEMS

Russell Y. Webb, Scott G. Adams, Noel C. MacDonald

Proceedings Volume 3519, Microrobotics and Micromanipulation; (1998) https://doi.org/10.1117/12.325740
Event: Photonics East (ISAM, VVDC, IEMB), 1998, Boston, MA, United States

Abstract

Single-crystal silicon microelectromechanical devices with thermal silicon dioxide isolation segments were fabricated with a SCREAM based process; mechanical and electrical characteristics of these devices were tested. Isolation segments (26 micrometers high, 8 micrometers long, and 2 micrometers wide) have been used to isolate 1 micrometers wide, 22 micrometers high single crystal silicon (SCS) beams. Released isolation segments and Al-Si contacts allow electronics to be embedded within SCS MEMS and bare silicon beams to be used for springs and actuators.

Citation Download Citation

Russell Y. Webb, Scott G. Adams, and Noel C. MacDonald "Suspended thermal oxide trench isolation for SCS MEMS", Proc. SPIE 3519, Microrobotics and Micromanipulation, (5 October 1998); https://doi.org/10.1117/12.325740

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